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NP52N06SLG
PACKAGE DRAWING (Unit: mm)
TO-252 (MP-3ZK)
<R>
6.5 ± 0.2
5.1 TYP.
4.3 MIN.
2.3 ± 0.1
0.5 ± 0.1
No Plating
4
1
2
3
No Plating
1.14 MAX.
2.3
2.3
0.76 ± 0.12
0 to 0.25
0.5 ± 0.1
EQUIVALENT CIRCUIT
Drain
Body
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1.0
Gate
Gate
Protection
Diode
Source
Diode
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
6
Data Sheet D18202EJ2V0DS
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